TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the development of 90-nanometer (nm) one-transistor MONOS ...

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...

An ultra-scaled memory device, called `Dynamic Flash Memory (DFM)’. With a dual-gate Surrounding Gate Transistor (SGT), a capacitorless 4F 2 cell can be achieved. “This paper proposes an ultra-scaled ...

No matter which flash-memory-programming method you use, optimization of the programming algorithm is a key consideration. It has the potential to reduce flash-programming time and, therefore, ...

NAND Flash is a type of non-volatile memory technology that has revolutionized data storage in the digital age. It is a form of flash memory, which means it can be electrically erased and reprogrammed ...

As a part of JST PRESTO program, associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...

Editor’s Note: NAND and NOR Flash memory play an integral role in embedded systems of all sorts but successful implementation requires careful attention to key ...

As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...