Reverse polarity is one of the most common causes of circuit failure, from hobby projects to industrial systems. The good news is that a well-designed reverse polarity protection using MOSFET ...
Abstract: The silicon (Si) fin-field-effect-transistor (FinFET) technology revolutionized the semiconductor industry by enabling scaling down to the advanced 4-nm node. Even FinFET has limitations, ...
Abstract: In this paper, we demonstrate 1500 V fully-vertical GaN-on-Si trench MOSFETs (FV-MOS) with conductive buffer and fluorine implanted termination (FIT). Thanks to the conductive buffer layers, ...
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